Breakthrough in research of semiconductor laser chip technology in China

Recently, by the researcher of the high-power semiconductor laser task group of the State Key Laboratory of Phosphorescence and Applications of the Changchun Institute of Optics and Lasers, Chinese Academy of Sciences, Zang Cunzhu, the leading high-power high-brightness photonic crystal laser and array in the field of knowledge innovation engineering of the Chinese Academy of Sciences Progress, they through the Bragg reflection waveguide structure, successfully semiconductor laser fast axis (vertical) divergence angle from 40 degrees to 7.5 degrees, slow axis (horizontal) divergence angle of 7.2 degrees, to achieve near-round beam light.

One of the biggest drawbacks of semiconductor lasers has been their large divergence angle and elliptical light spot, which has resulted in poor beam quality. The beam quality reflects the convergence of the laser and directly affects the practical application.

The research team uses a bilateral transverse Bragg reflection waveguide structure. The structure conducts optical guided waves through the photonic band gap principle. The limited mode is an optical defect mode, which can effectively compress the far-field divergence angle of the laser. This type of device structure can be used not only for quantum well lasers but also for semiconductor lasers with different wavelengths and gain media, such as quantum dots, quantum cascade lasers, and the like. The core structure of the device has been applied for 4 national invention patents. At present, researchers are seizing the time to optimize the process, further improve the performance of the device, and strive to achieve practical.