Cree (NASDAQ: CREE) announced a non-exclusive, global fee-based patent license agreement with Nexperia of the Netherlands. Through this agreement, Nexperia will have access to the patented Cree GaN GaN power device portfolio, including more than 300 licensed US and foreign patents covering HEMT (High Electron Mobility Field Effect Transistors) and GaN Gallium Nitride Many innovations in Schottky diodes. This patent portfolio addresses new device structures, materials and process enhancements, as well as packaging technologies. This patent license does not include technology transfer. John Palmour, co-founder and chief technology officer of Wolfspeed, said: "Since the establishment of Cree, we have conducted in-depth research on new compound semiconductor materials including GaN gallium nitride and SiC silicon carbide, and developed their unique properties. New devices. Based on Career's decades-old innovations, help enable new power management and wireless system market introductions. To accelerate the growth of these new markets, Cree is working on GaN for GaN GaN power management systems. GaN power device patents are authorized." About CREE Founded in 1987, Cree is a US listed company (Nasdaq: CREE, 1993). It is a famous manufacturer of LED epitaxy, chips, packaging, LED lighting solutions, compound semiconductor materials, power devices and RF. Business and industry leaders. Cree's product line includes SiC materials, power switching equipment and RF equipment, targeting electric vehicles, fast charging, inverters, power supplies, telecommunications and mil/aero. Cree's LED product line includes blue and green LED chips, high-brightness LEDs and lighting-grade LED lights for indoor and outdoor lighting, video displays, traffic and electronic signals and signals. Cree's LED lighting systems and luminaires serve indoor and outdoor applications. Shenzhen ChengRong Technology Co.,Ltd. , https://www.dglaptopstandsupplier.com