Diodes Introduces Better DIOFET Devices

Iodes introduced the first products developed using a proprietary DIOFET process that integrates a power MOSFET with an anti-parallel Schottky diode on a single chip. The latest DMS3014SSS and DMS3015SSS devices are suitable for the low-side MOSFET position of synchronous buck point-of-load (PoL) converters, helping to increase efficiency while reducing the operating temperature of fast switching point-of-load converters in high-volume computing, communications, and industrial applications. .

At a VGS voltage of 10V, the RDS(ON) of the DMS3014SSS and DMS3015SSS are only 10m? and 8.5m? respectively. These devices minimize the conduction losses typically associated with low-side MOSFETs. At the same time, the DIOFET- integrated Schottky diode forward voltage is 25% lower than comparable MOSFET or Schottky diodes and 48% lower than typical MOSFET intrinsic body diodes, minimizing switching losses and increasing efficiency. . The DIOFET- integrated Schottky diodes have low reverse recovery charge and a softer reverse recovery feature that further reduces body diode switching losses.

In the benchmark test, the operating temperature of the DIOFET was 5% lower than other competing solutions. For every 10°C reduction in MOSFET junction temperature, the DIOFET's permanent reliability is doubled. Lower DIOFET device operating temperatures greatly increase the reliability of the point-of-load converter.