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When exposed to light, the saturated reverse leakage current is greatly increased, forming a photocurrent that varies with the intensity of the incident light. When the light illuminates the PN junction, an electron-hole pair can be generated in the PN junction, and the density of minority carriers is increased. These carriers drift under the reverse voltage, causing the reverse current to increase. Therefore, the intensity of the light can be used to change the current in the circuit.
When the photodiode is not illuminated, there is a small saturated reverse leakage current, that is, a dark current, at which time the photodiode is turned off.